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          RATING AND CHARACTERISTIC CURVES (CDBFR0130R) Page 2 QW-A1114 REV:A Comchip Technology CO., LTD. 340 310 350 330 360 320 AVG:335mV 25 O C Ta= IF=10mA n=30pcs Fig. 5 - VF Dispersion map 600 0 800 400 1000 200 100 300 500 700 900 Fig. 6 - IR Dispersion map 30 0 40 20 50 10 5 15 25 35 45 Fig. 7 - CT Dispersion map 25 O C Ta= VR=10V n=30pcs AVG:111nA AVG:18.8pF 25 O C Ta= F=1MHz VR=0V n=10pcs F o r w a r d v o l t a g e ( m V ) R e v e r s e c u r r e n t ( n A ) C a p a c i t a n c e b e t w e e n t e r m i n a l s ( p F ) C a p a c i t a n c e b e t w e e n t e r m i n a l s ( P F ) Reverse voltage (V) F o r w a r d c u r r e n t ( m A ) 0.2 0.4 0 1 100 0.5 0.1 0.8 Forward voltage (V) Fig. 1 - Forward characteristics R e v e r s e c u r r e n t ( A ) Reverse voltage (V) 1u 1n 10u 100n 0 10 20 25 30 Fig. 2 - Reverse characteristics 0 20 40 60 80 100 0 25 50 75 100 125 e ( O C) Ambient temperatur A v e r a g e f o r w a r d c u r r e n t ( % ) Fig.4 - Current derating curve 1000 Fig. 3 - Capacitance between terminals characteristics 0.6 0.3 0.1 1m 0.7 10 0 15 10 20 1 10 100 5 25 30 O - 2 5 C O 2 5 C O 7 5 C O 1 2 5 C 100u 15 5 10n 25 O C 25 O C - 75 O C 25 O C 1 f = 1 MHz Ta = 25 C SMD Schottky Barrier Diode |